Cross-Over Chip introduced.

Construction:

• High purity Alumina substrate.
• Copper Microstrip transmission line.
• Lead-free 12mil diameter BGA termination (Gnd.-Signal-Gnd.).
  
• Epoxy-resin overcoat.

Features:

• Tightly controlled 50Ω impedance microstrip transmission line.
• High frequency performance(Bandwidth exceeding 20 GHz).
• BGA Gnd.-Signal-Gnd. termination for high frequency lead-in, lead-out.
• Volume production - suitable for commercial and custom applications.
• Competitive pricing.

Description:

1. Significance: This high frequency crossover device is a surface mount component that provides excellent signal integrity characteristics beyond 20 GHz to be achieved while allowing circuit routing transitions with traditional BGA manufacturing techniques on single layer board layouts that normally require significantly more expensive multi-layer RF and microwave PCB manufacturing or RF cabling assemblies.
2. Application: High frequency applications addressed by this type of device include optical to electrical modules, Test Instrument Load boards, Test instrumentation modules, and any other systems with signal bandwidths beyond 5GHz embedded in single layer high frequency design environments.
3. Field reports/Reference Customers: Thin Film Technology has demonstrated very good high frequency component packaging with many optical module companies through 40 Gbps applications. TFT utilizes simulation techniques and also capitalizes on the advantages of thin film construction to realize high performance electrical components. These devices are realized using high performance service for your design support including fast turn custom prototypes to full production capacity start to finish.

Mechanical Specifications:
Electrical Specifications:

• Nombre: Juan J. Núñez C.
  
• Asignatura: CRF.
• Fuente: http://www.thin-film.com/web/TFT.nsf/+view+/A40CE9D7143C127286257591006665DA/$FILE/XO02M610.00_.pdf